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Doping of germanium and silicon crystals with non-hydrogenic acceptors
for far infrared lasers
Inventors:
Eugene E. Haller, Erik Bründermann, U.S. Patent
6,011,810, Date: 4 January 2000
The tuning range from 1 to 4 THz of the
germanium
laser
corresponds in other units to 30 to 140/cm, 0.4 to 1.6 kJ/mol, 4 to 17
meV, 70 µm to 0.35 mm or 40 to 200 Kelvin.
Details can be found in the book chapter: E. Bründermann,
"Widely Tunable Far Infrared Hot Hole
Semiconductor Lasers" published as Chapter 6 in "Long-Wavelength
Infrared Semiconductor Lasers" by John Wiley and Sons, approx. 90
pages. Download
pdf-content
list. Sneak preview of section
6.1.
Download two-page New
Technology Announcement
pdf-flyer.
For inquiries visit Tech Transfer at Lawrence Berkeley
National Lab, reference number: IB-1161.
For technical questions
contact Erik
Bründermann.
For Details see also: E.
Bründermann, B. Born, S. Funkner, M. Krüger, M.
Havenith,
Terahertz
spectroscopic
techniques for the study of proteins in aqueous solutions
Proc. SPIE 7215 72150E,
1-9 (2009). DOI: 10.1117/12.808270. Link
to PDF.
See also THz germanium laser milestones.
|
Fig: terahertz germanium laser
production. FZ: float zone, CZ: Czochralski, xx: dopant e.g. Be |
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